The fin consists of a multilayer sandwich of TiN/ HfO2/SiO2 with the finFET metal gate and epi SiP as the two electrodes. The authors observed that “the new (device) has a very low set voltage and ...
For decades, planar complementary metal oxide semiconductor ... FinFET Transistor Basics A finFET — a type of field-effect transistor (FET) — can be envisioned as a traditional planar CMOS transistor ...
FinFETs can be implemented either on bulk silicon or SOI wafer ... Allen, C, "A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry ...
A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...
Both optical and X-ray are used in conjunction for several applications. For example, chipmakers must measure the high-k/metal-gate structures in finFETs. A typical gate stack can have five to seven ...