A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right). (Courtesy: Y Shao) A new transistor made from semiconducting vertical nanowires of ...

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University.

analysis Over the last couple of weeks, TSMC's ambitious roadmap for its 2nm manufacturing process has sparked significant ...

this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the ...

From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It ...

Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking ...

Using tools at MIT.nano, MIT's state-of-the-art facility for nanoscale research, the engineers were able to carefully control ...

They are also exploring vertical fin-shaped structures, in addition to vertical nanowire transistors, which could potentially improve the uniformity of devices on a chip. This research is funded ...

Their role in developing high-efficiency solar cells, batteries, LEDs, and transistors underscores their significance in modern technology. Moreover, their utility in biosensors and drug delivery ...