For decades, chipmakers have used a dry etch technology, called reactive ion etch (RIE), in the fab. RIE involves creating plasma, which is an energized gas based on charged particles (ions) and ...
Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...
Through via hole fabrication process by deep reactive-ion etching (DRIE): (a) Sample cleaning; (b) Deposition of mask material; (c) Transfer of desired pattern; (d) Desired pattern achieved; (e) ...
(hereinafter referred to as "ULVAC") and Silicon Austria Labs GmbH (hereinafter referred to as "SAL") join forces to collaborate on the development of plasma etching processes for high-volume ...
The chemical etching process he used is a bit fussy, and prone to undercutting of the mask if the etchant seeps underneath it. As its name implies, RIE uses a plasma of highly reactive ions to do ...