Endura Volta Cobalt CVD - Applied Materials
应用材料公司的 Endura Volta CVD Cobalt 系统使公司能够在 CVD 领域保持技术领先地位，在超过 15 年的铜阻挡层/种子层 (CuBS) 开发中首次改变材料，以实现持续的高性能互连微缩。这种史无前例的技术可以沉积厚度不足 20Å 的种子增强型衬层和选择性盖帽层，从而改善 ...
Area-selective chemical vapor deposition of Co for Cu capping …
2016年1月1日 · CoCp (CO) 2 with moderate kinetic barrier on SiO 2 is a potential precursor for selective CVD. Selective CVD of Co is achievable below a process temperature of 300 °C. The cyclic CVD with NH 3 plasma enables reduction of C in the Co film while maintaining the DS.
Cobalt diffusion during the initial stage of CVD diamond growth …
2023年10月1日 · In conclusion, the reduction of cobalt diffusion in chemical vapor deposition (CVD) processes can be achieved by employing cemented carbide with smaller grain sizes and lower initial cobalt content. Additionally, decreasing the growth temperature or increasing the Co-removal depth significantly inhibits cobalt diffusion to the diamond film.
Endura Volta Cobalt CVD - Applied Materials
The Volta CVD Cobalt system introduces a new materials era for extending copper interconnect technology. It promotes copper seed layer coverage by improving copper wetting, resulting in a thin, continuous, conformal layer that facilitates repair of discontinuities and formation of a robust seed layer. This high-quality layer in turn promotes ...
Area-selective chemical vapor deposition of cobalt from dicobalt ...
2020年3月6日 · The authors describe the enhancement of the area-selective chemical vapor deposition of cobalt films on one oxide surface over another from the precursor Co 2 (CO) 8 by addition of the nucleation inhibitor ammonia (NH 3).
The authors describe the enhancement of the area-selective chemical vapor deposition of cobalt films on one oxide surface over another from the precursor Co 2(CO) 8 by addition of the nucleation inhibitor ammonia (NH 3). In the absence of an NH 3 coflow, the Co 2(CO) 8 precursor exhibits a weak intrinsic selectivity: at 70°C, Co nucleates ...
Applied Materials Introduces the Biggest Materials Change to ...
The Endura Volta CVD system, with its two new process steps, represents a major technology extension for copper interconnects beyond 28nm. The first step involves the deposition of a thin, conformal CVD cobalt liner to increase the gap fill window of copper in narrow interconnects.
By a direct-liquid-evaporation chemical vapor deposition (DLE-CVD) method, we deposited smooth low-resistance cobalt (Co) and cobalt nitride (Co xN) thin films with excellent conformality at low temperatures down to 200 1C. In the DLE process, a cobalt amidinate precursor solution, bis(N,N0-diisopropylacet-
Chemical Vapor Deposition of Cobalt and Nickel Ferrite Thin …
2021年9月24日 · Transition metal ferrites, such as CoFe 2 O 4 (CFO) and NiFe 2 O 4 (NFO), have gained increasing attention as potential materials for supercapacitors. Since chemical vapor deposition (CVD) offers advantages like interface quality to the underlying substrates and the possibility for coverage of 3D substrates, two CVD processes are reported for ...
CVD of cobalt–tungsten alloy film as a novel copper diffusion …
2013年6月1日 · The thinner barrier metal achieved by using CVD-CoW reduces the total resistivity of interconnects. In addition, CVD-CoW would be a more promising material for a barrier metal if we could improve the method for forming CVD-CoW film without oxygen incorporation.