Trapping phenomena and degradation mechanisms in GaN-based power HEMTs ...
2018年5月1日 · Schematic representation of the process responsible for negative threshold voltage shift in GaN-based MIS-HEMTs. In most cases, GaN-based MIS-HEMTs are designed to be used in cascode configuration, and mounted in a …
In this paper, we present a methodology to analyze the trap-ping and detrapping behavior in GaN HEMTs that is amenable to integration with long-term stress experiments. Using the proposed technique, we determine the layer location, energy level, and trapping/detrapping time constants of the dominant traps that exist in the studied devices.
2017年2月13日 · Several researchers have studied trapping effects in AlGaN/GaN transistors using (1) DLTS/DOTS [5], and (2) current-transient spectroscopy (CTS) [3, 6,7]. In this paper, we investigate the traps found from CTS by plotting the thermal and tunneling time constant maps in both AlGaN/GaN layers.
In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics...
In this paper we review gate lag in GaN-based high electron mobility transistors (HEMTs). Current transient spectroscopy, a characterization method based on gate lag measurements, is applied for trap identification in AlGaN/GaN HEMTs grown by plasma-assisted molecular beam epitaxy.
Positive and negative charge trapping GaN HEMTs: Interplay …
2021年11月1日 · The negative transient, i.e. decreasing current, can either be ascribed to a) negative charge capture within the structure due to electron leakage through the strain-relief layer (process 2); or to b) charge redistribution in C-GaN (process 1).
Trap Characterization Techniques for GaN-Based HEMTs: A …
2023年10月31日 · In recent decades, several techniques such as low-frequency noise (LFN), frequency dispersion properties, and deep-level transient spectroscopy (DLTS) have been developed to characterize the locations, types, concentrations, energy levels, and capture cross-sections of traps in GaN HEMTs, which are also applicable to novel GaN HEMT structures ...
The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high elec-tron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to …
(PDF) Positive and negative charge trapping GaN HEMTs: …
2021年12月17日 · We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate.
Negative charging effect of traps on the gate leakage current of …
2016年7月15日 · Journal of the Korean Physical Society - The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate...