Small-Signal Behavioral Model for GaN HEMTs based on Long …
In this paper, a modified recurrent neural network (RNN) technique, long-short term memory (LSTM) algorithm based, small-signal behavioral modeling methodology for Gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. The verification is carried out on an 8×125 μm GaN HEMT with a 0.25 μm gate feature size.
A fast small signal modeling method for GaN HEMTs
2021年1月1日 · In this letter, a 19-element small signal equivalent circuit model is established to describe the characteristics of the device precisely. The simulation of the high frequency behavior is improved by introducing the series parasitic inductances into the cold pinch-off model.
A new small-signal modeling and extraction method in AlGaN/GaN …
2008年1月1日 · In this paper, a 20-element distributed small-signal model is proposed and simple but efficient direct extraction techniques are developed for the high frequency range applications of GaN HEMTs. Good agreement between the measured and simulated S-parameters can be achieved in a large frequency range and over a wide bias range. Then, considering ...
A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model ...
2024年11月28日 · This study introduces a novel method that integrates artificial neural networks (ANNs) with the Particle Swarm Optimization (PSO) algorithm to enhance the efficiency and precision of parameter optimization for the small-signal equivalent model of …
An improved small-signal model for GaN HEMTs devices
2024年4月18日 · An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method.
Small-signal model parameter extraction for AlGaN/GaN HEMT
2016年3月1日 · A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor (HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions (G gsf and G gdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new ...
A compact Non-Quasi-Static small-signal model for GaN HEMT
2024年6月1日 · A new compact model for small signal analysis of GaN HEMT. Model takes into account NQS operating conditions implemented in Verilog-A. Model has been validated with TCAD simulations and experimental results.
An analysis method of small-signal model for packaged GaN HEMT
This paper proposes a method for modeling the small-signal model of GaN HEMT with package. With the combination of step-by-step extraction method and the full electromagnetic simulation of the passive part, this method can avoid the large amount of data optimization efforts in the traditional method.
Hybrid small-signal model parameter extraction for GaN HEMT …
2024年5月9日 · This article proposes a parameter extraction method suitable for Si substrate based GaN HEMT small signal equivalent circuit models. The proposed method is based on a swarm intelligence optimization algorithm, which improves efficiency and accuracy by introducing a slope penalty factor (SPF) method for the objective function, rather than simply ...
An Accurate and Improved GaN HEMT Small Signal Parameter …
2020年2月25日 · This document proposes a small-signal distributed 20-element model and develops easy but effective techniques for direct extraction for high frequency applications of the GaN HEMTs. Together with “cold” circumstances under different frequency range, i.e., extrinsic components are extracted from two groups S-parameters.
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