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Polar Semiconductor set to gain US government grant of $120 million

Polar Semiconductor set to gain US government grant of $120 million

SOLVED: An engineer at a semiconductor company wants to model the relationship between the gain or hFE of a device (y) and three parameters: emitter-RS (x1), base-RS (x2), and emitter-to-base-RS (x3) . The data are shown below: x1, x2, x3, y, Emitter-RS Base-RS E-B-RS hFE 16.12 220.5 3.375 48.14 15.13 223.5 6.125 109.60 15.50 217.6 5.000 82.68 15.13 228.5 6.625 112.60 15.50 230.2 5.7

SOLVED: An engineer at a semiconductor company wants to model the relationship between the gain or hFE of a device (y) and three parameters: emitter-RS (x1), base-RS (x2), and emitter-to-base-RS (x3) . The data are shown below: x1, x2, x3, y, Emitter-RS Base-RS E-B-RS hFE 16.12 220.5 3.375 48.14 15.13 223.5 6.125 109.60 15.50 217.6 5.000 82.68 15.13 228.5 6.625 112.60 15.50 230.2 5.7

Problem 1 (17.2-2) Peak Gain Coefficient of a Semiconductor Optical Amplifier at T = 0 K. (a) Show that the peak value Yp of the gain coefficient Yo(v) at T = 0 K is located at v = (E - E)/h (b) Obtain an analytical expression for the peak gain coefficient Yp as a function of the injected-carrier concentration An at T = 0 K. (c) Plot Yp versus An for an InGaAsP amplifier (Ao = 1300 nm, n = 3.5, t = 2.5 ns, mc = 0.06 mo, my = 0.4 mo) for values of n in the range of 1x10^18 to 2 x 10^18 cm^-3. (d)

Problem 1 (17.2-2) Peak Gain Coefficient of a Semiconductor Optical Amplifier at T = 0 K. (a) Show that the peak value Yp of the gain coefficient Yo(v) at T = 0 K is located at v = (E - E)/h (b) Obtain an analytical expression for the peak gain coefficient Yp as a function of the injected-carrier concentration An at T = 0 K. (c) Plot Yp versus An for an InGaAsP amplifier (Ao = 1300 nm, n = 3.5, t = 2.5 ns, mc = 0.06 mo, my = 0.4 mo) for values of n in the range of 1x10^18 to 2 x 10^18 cm^-3. (d)

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SOLVED:Responsivity. Find the maximum responsivity of an ideal (unity quantum efficiency and unity gain) semiconductor photodetector made of (a) Si; (b) GaAs; (c) InSb.

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